The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Sep. 12, 2013
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Franco Mariani, Regensburg, DE;

Andreas Bauer, Landshut, DE;

Reinhard Hess, Straubing, DE;

Gerhard Leschik, Regensburg, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/06 (2013.01); H01L 21/78 (2013.01); H01L 29/0684 (2013.01);
Abstract

A method includes providing a semiconductor wafer including multiple semiconductor chips, forming a first scribe line on a frontside of the semiconductor wafer, wherein the first scribe line has a first width and separates semiconductor chips of the semiconductor wafer, forming a second scribe line on the frontside of the semiconductor wafer, wherein the second scribe line has a second width and separates semiconductor chips of the semiconductor wafer, wherein the first scribe line and the second scribe line intersect in a crossing area which is greater than a product of the first width and the second width, and plasma etching the semiconductor wafer in the crossing area.


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