The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Oct. 06, 2015
Renesas Electronics Corporation, Tokyo, JP;
Hiroshi Sunamura, Kanagawa, JP;
Kishou Kaneko, Kanagawa, JP;
Naoya Furutake, Kanagawa, JP;
Shinobu Saitou, Kanagawa, JP;
Yoshihiro Hayashi, Kanagawa, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A semiconductor device has a p-type metal oxide semiconductor layer; a source electrode connected with the p-type metal oxide semiconductor layer; a drain electrode connected with the p-type metal oxide semiconductor layer; and a gate electrode arranged to oppose to a part of the p-type metal oxide semiconductor layer. The gate electrode and the drain electrode are separated from each other in a top view.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile