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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9355881 B1

PDFFull Text
Date of Patent:
May. 31, 2016

Filed:

Feb. 18, 2014

Semiconductor device including a dielectric material

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Bernhard Goller, Villach, AT;

Eva-Maria Hess, Gremsdorf, DE;

Edward Fuergut, Dasing, DE;

Christian Schweiger, Pentling, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Dicke, Billig & Czaja, PLLC

Primary Examiner:

Jose R Diaz

Int. Cl.
CPC ...
H01L 21/683 (2006.01); H01L 21/268 (2006.01); H01L 21/304 (2006.01); H01L 21/762 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); H01L 21/268 (2013.01); H01L 21/304 (2013.01); H01L 21/76251 (2013.01); H01L 21/78 (2013.01); H01L 24/02 (2013.01); H01L 21/568 (2013.01); H01L 23/3114 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/0231 (2013.01); H01L 2924/06 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/181 (2013.01); H01L 2924/201 (2013.01); H01L 2924/2011 (2013.01); H01L 2924/2064 (2013.01); H01L 2924/20108 (2013.01); H01L 2924/20109 (2013.01); H01L 2924/20111 (2013.01); H01L 2924/20641 (2013.01); H01L 2924/20642 (2013.01);
Abstract

A method for manufacturing a semiconductor device includes providing a carrier and a semiconductor wafer having a first side and a second side opposite to the first side. The method includes applying a dielectric material to the carrier or the semiconductor wafer and bonding the semiconductor wafer to the carrier via the dielectric material. The method includes processing the semiconductor wafer and removing the carrier from the semiconductor wafer such that the dielectric material remains on the semiconductor wafer to provide a semiconductor device comprising the dielectric material.

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