The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Sep. 24, 2011
Weibo Yu, Singapore, SG;
Hsueh-chin LU, Hsin-Chu, TW;
Han-guan Chew, Singapore, SG;
Kuo Bin Huang, Jhubei, TW;
Chao-cheng Chen, Shin-Chu, TW;
Syun-ming Jang, Hsin-Chu, TW;
Weibo Yu, Singapore, SG;
Hsueh-Chin Lu, Hsin-Chu, TW;
Han-Guan Chew, Singapore, SG;
Kuo Bin Huang, Jhubei, TW;
Chao-Cheng Chen, Shin-Chu, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A single wafer etching apparatus and various methods implemented in the single wafer etching apparatus are disclosed. In an example, etching a silicon nitride layer in a single wafer etching apparatus includes: heating a phosphoric acid to a first temperature; heating a sulfuric acid to a second temperature; mixing the heated phosphoric acid and the heated sulfuric acid; heating the phosphoric acid/sulfuric acid mixture to a third temperature; and etching the silicon nitride layer with the heated phosphoric acid/sulfuric acid mixture.