The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Mar. 26, 2015
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Assignee:
Hitachi Kokusai Elecetric, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); C23C 16/52 (2006.01); C23C 16/46 (2006.01); C23C 16/458 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01); H01L 21/033 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); C23C 16/345 (2013.01); C23C 16/455 (2013.01); C23C 16/458 (2013.01); C23C 16/46 (2013.01); C23C 16/52 (2013.01); H01L 21/0217 (2013.01); H01L 21/0332 (2013.01);
Abstract
Provided is a configuration capable of suppressing a variation in characteristics of transistor. The configuration includes: a process chamber; a gas supply unit configured to supply a hard mask forming gas into the process chamber; a substrate support table configured to support a substrate Wof an nlot having a film to be etched formed thereon; a heater embedded in the substrate support table; and a controller configured to control a temperature distribution of the heater based on an etching information of a substrate Wof an mlot processed prior to the nlot.