The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Aug. 04, 2011
Matthew Meitl, Durham, NC (US);
Christopher Bower, Raleigh, NC (US);
Etienne Menard, Voglans, FR;
James Carter, Chapel Hill, NC (US);
Allen Gray, Holly Springs, NC (US);
Salvatore Bonafede, Chapel Hll, NC (US);
Matthew Meitl, Durham, NC (US);
Christopher Bower, Raleigh, NC (US);
Etienne Menard, Voglans, FR;
James Carter, Chapel Hill, NC (US);
Allen Gray, Holly Springs, NC (US);
Salvatore Bonafede, Chapel Hll, NC (US);
Semprius, Inc., Durham, NC (US);
Abstract
A method of fabricating transferable semiconductor devices includes providing a release layer including indium aluminum phosphide on a substrate, and providing a support layer on the release layer. The support layer and the substrate include respective materials, such as arsenide-based materials, such that the release layer has an etching selectivity relative to the support layer and the substrate. At least one device layer is provided on the support layer. The release layer is selectively etched without substantially etching the support layer and the substrate. Related structures and methods are also discussed.