The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Sep. 12, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Wei Liu, San Jose, CA (US);

Naomi Yoshida, Sunnyvale, CA (US);

Mandar Balasaheb Pandit, Santa Clara, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01J 37/321 (2013.01); H01L 21/3065 (2013.01); H01L 21/31122 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 21/32137 (2013.01); H01L 21/823828 (2013.01);
Abstract

Embodiments of methods for removing carbon-containing films are provided herein. In some embodiments, a method for removing a carbon-containing layer includes providing an ammonia containing process gas to a process chamber having a substrate with a silicon oxide layer disposed atop the substrate and a carbon-containing layer disposed atop the silicon oxide layer disposed in the process chamber; providing RF power to the process chamber to ignite the ammonia containing process gas to form a plasma; and exposing the substrate to NH and/or NHradicals and hydrogen radicals formed in the plasma to remove the carbon-containing layer.


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