The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Nov. 21, 2011
Shunya Watanabe, Hitachinaka, JP;
Mami Konomi, Hitachinaka, JP;
Hisayuki Takasu, Oarai, JP;
Atsushi Kamino, Naka, JP;
Shunya Watanabe, Hitachinaka, JP;
Mami Konomi, Hitachinaka, JP;
Hisayuki Takasu, Oarai, JP;
Atsushi Kamino, Naka, JP;
HITACHI HIGH-TECHNOLOGIES CORPORATION, Tokyo, JP;
Abstract
The sampleis tilted/oscillated with respect to the optical axis (Z-axis) of the ion beamto repeat tilt and tilt/restoration of a processing target surfaceof the samplebetween a surface state in which the processing target surfaceof the samplefaces a tilt axis direction (Y-axis direction) and a tilted surface state in which a portion of the processing target surfaceon the sample stage side protrudes in the tilt axis direction (Y-axis direction) than does a portion of the processing target surfaceon the mask side, so that the processing target surfaceis irradiated with the ion beamat a low angle, and projections/recessesderived from a voidor a dissimilar materialare suppressed. Accordingly, it is possible to suppress generation of projections/recesses derived from a void or dissimilar material in fabrication of a cross section sample, and thus fabricate a sample cross section suitable for observation/analysis.