The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Mar. 14, 2013
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Moonkyun Maeng, El Dorado Hills, CA (US);

Aaron Martin, El Dorado Hills, CA (US);

Hsiao-Ching Chuang, San Jose, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01); G11C 7/10 (2006.01); G11C 5/14 (2006.01); G11C 16/28 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1084 (2013.01);
Abstract

Embodiments include systems, methods, and apparatuses for reading a data signal from a memory, such as a dynamic random access memory (DRAM). In one embodiment, a memory receiver may include a differential amplifier to receive a data signal from the memory and pass a differential output signal based on a voltage difference between the data signal and a reference voltage. The data signal may have a first direct current (DC) average voltage level, and the differential amplifier may shift the differential output signal to a second DC average voltage level that is substantially constant over a range of values of the first DC average voltage level. In another embodiment, a voltage offset compensation (VOC) circuit may apply a compensation voltage to the output signal that is based on an activated rank or an identity of the memory module. Other embodiments may be described and claimed.


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