The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Dec. 21, 2012
Applicant:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Inventors:

Farid Barakat, Austin, TX (US);

Victoria Jean Bruce, Austin, TX (US);

Lihong Cao, Austin, TX (US);

Assignee:

ADVANCED MICRO DEVICES, INC., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 23/04 (2006.01); G01N 23/08 (2006.01); H01J 35/04 (2006.01); G01N 23/083 (2006.01);
U.S. Cl.
CPC ...
G01N 23/046 (2013.01); G01N 23/04 (2013.01); G01N 23/083 (2013.01); H01J 35/04 (2013.01); G06T 2207/30148 (2013.01);
Abstract

Imaging methods, apparatus and systems are provided for using different irradiation frequencies to generate a composite three-dimensional image. One exemplary method for imaging a semiconductor device involves irradiating the semiconductor device with a first frequency of electromagnetic radiation, obtaining a first radiation response from the semiconductor device in response to the first frequency of electromagnetic radiation, irradiating the semiconductor device with a second frequency of electromagnetic radiation, obtaining a second radiation response from the semiconductor device in response to the second frequency of electromagnetic radiation, and generating a composite image of the semiconductor device based at least in part on the first radiation response and the second radiation response.


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