The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Oct. 16, 2013
Tsinghua University, Beijing, CN;
Institute of Physics, Chinese Academy of Sciences, Beijing, CN;
Qi-Kun Xue, Beijing, CN;
Ke He, Beijing, CN;
Xu-Cun Ma, Beijing, CN;
Xi Chen, Beijing, CN;
Li-Li Wang, Beijing, CN;
Ya-Yu Wang, Beijing, CN;
Li Lv, Beijing, CN;
Cui-Zu Chang, Beijing, CN;
Xiao Feng, Beijing, CN;
Tsinghua University, Beijing, CN;
Institute of Physics, Chinese Academy of Sciences, Beijing, CN;
Abstract
A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1×10cm. One of the first element and the second element magnetically dopes the topological insulator quantum well film. An electric field is applied to the magnetically doped topological insulator quantum well film to decrease the carrier density.