The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
May. 19, 2014
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Masahito Kanamura, Isehara, JP;
FUJITSU LIMITED, Kawasaki, JP;
Abstract
A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor on a substrate; a second semiconductor layer formed of a nitride semiconductor on the first semiconductor layer; an insulating layer formed on the second semiconductor layer; a source electrode and a drain electrode formed on the second semiconductor layer; and a gate electrode formed on the insulating layer. The insulating layer is formed of a material including an oxide and is formed by laminating a first insulating layer and a second insulating layer in a positioning order of the first insulating layer followed by the second insulating layer from a side of the second semiconductor layer, and an amount of hydroxyl groups included in per unit volume of the first insulating layer is less than an amount of hydroxyl groups included in per unit volume of the second insulating layer.