The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Dec. 19, 2011
Sul Hwan Lee, Icheon-si, KR;
Sul Hwan Lee, Icheon-si, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a semiconductor device includes forming at least two gate patterns on a substrate, forming sidewalls surrounding the gate patterns, wherein the sidewalls extend above an upper surface of the gate patterns, and forming a first conducting material in a first space and a second space, wherein the first space is provided above the gate patterns and between the sidewalls that extend above the upper surface of the gate patterns and the second space is provided between the gate patterns.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile