The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Jul. 09, 2014
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
National Chiao-tung University, Hsinchu, TW;
Yen-Teng Ho, Tainan, TW;
Yi Chang, Hsinchu County, TW;
Abstract
Disclosed is a semiconductor structure comprising a single crystal substrate, a channel layer formed above the substrate from a transition metal dichalcogenides (TMDC) material, and a single crystal epitaxial buffer layer formed between the substrate and the channel layer, wherein the buffer layer is formed from material having a lattice constant mismatch of less than 5% with the lattice constant of the channel layer material. Also, disclosed is a method of forming a semiconductor structure comprising selecting a substrate formed from a single crystal material, preparing the substrate for template growth, growing a template on the substrate wherein the template is formed from single crystal material, and growing channel material on the template wherein the channel material is formed from a TMDC material and wherein the buffer layer material has a lattice constant mismatch of less than 5% with the lattice constant of the channel layer material.