The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2016

Filed:

Jan. 29, 2015
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Armin Willmeroth, Augsburg, DE;

Franz Hirler, Isen, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Uwe Wahl, Munich, DE;

Winfried Kaindl, Unterhaching, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/322 (2006.01); H01L 29/739 (2006.01); H01L 29/32 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/165 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 21/3223 (2013.01); H01L 29/66333 (2013.01); H01L 29/66712 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 29/7811 (2013.01); H01L 21/304 (2013.01); H01L 21/30604 (2013.01); H01L 29/0653 (2013.01); H01L 29/0834 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/165 (2013.01); H01L 29/32 (2013.01);
Abstract

A super junction semiconductor device includes a semiconductor portion with a first surface and a second surface parallel to the first surface. The semiconductor portion includes a doped layer of a first conductivity type formed at least in a cell area. The super junction semiconductor device further includes columnar first super junction regions of a second, opposite conductivity type extending in a direction perpendicular to the first surface and separated by columnar second super junction regions of the first conductivity type. The first and second super junction regions form a super junction structure between the first surface and the doped layer. A distance between the first super junction regions and the second surface does not exceed 30 μm.


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