The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2016

Filed:

Jul. 20, 2015
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Shih-Fang Hong, Tainan, TW;

Po-Chao Tsao, New Taipei, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 23/00 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/84 (2006.01); H01L 27/092 (2006.01); H01L 27/108 (2006.01); H01L 29/423 (2006.01); H01L 27/088 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 27/10879 (2013.01); H01L 27/1211 (2013.01); H01L 29/0692 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/6681 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor integrated device includes a substrate having an active region defined thereon, a plurality of active fins positioned in the active region, and a plurality of first protecting fins surrounding the active region. Each of the plurality of active fins extends along a first direction and includes a first length along the first direction. The plurality of first protecting fins extend along the first direction. One of the plurality of first protecting fins immediately adjacent to the active region has a second length along the first direction, and the second length is longer than the first length.


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