The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Jul. 17, 2015
Applicants:
Jong-su Kim, Seoul, KR;
Hee-young Go, Seoul, KR;
Sang-jin Kim, Suwon-si, KR;
Yong-kug Bae, Hwaseong-si, KR;
Il-young Yoon, Hwaseong-si, KR;
Inventors:
Jong-Su Kim, Seoul, KR;
Hee-Young Go, Seoul, KR;
Sang-Jin Kim, Suwon-si, KR;
Yong-Kug Bae, Hwaseong-si, KR;
Il-Young Yoon, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 21/82 (2006.01); H01L 29/66 (2006.01); H01L 21/66 (2006.01); H01L 23/544 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/76224 (2013.01); H01L 21/82 (2013.01); H01L 21/823456 (2013.01); H01L 21/823468 (2013.01); H01L 21/823481 (2013.01); H01L 22/20 (2013.01); H01L 23/544 (2013.01); H01L 29/66545 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01);
Abstract
Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a substrate including a circuit region and a scribe lane region, an active fin protruding from the substrate in the circuit region, a first gate structure extending over the active fin in the circuit region, and a second gate structure formed in the scribe lane region.