The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Aug. 05, 2013
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); H01J 37/32 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32082 (2013.01); H01J 37/3266 (2013.01); H01J 37/32449 (2013.01); H01J 37/32669 (2013.01); H01J 37/32688 (2013.01); H01L 21/0273 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01);
Abstract
A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further, the plasma etching method includes an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask. Furthermore, in the plasma etching method, the plasma process and the etching process are repeated at least two or more times.