The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2016

Filed:

Apr. 05, 2013
Applicant:

Ulvac, Inc., Chigasaki-shi, Kanagawa, JP;

Inventors:

Isao Kimura, Susono, JP;

Takehito Jinbo, Chigasaki, JP;

Hiroki Kobayashi, Chigasaki, JP;

Youhei Endou, Susono, JP;

Youhei Oonishi, Susono, JP;

Assignee:

ULVAC, INC., Chigasaki-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/316 (2013.01); H01J 37/34 (2006.01); C23C 14/35 (2006.01); C23C 14/08 (2006.01); C23C 14/02 (2006.01); C01G 25/00 (2006.01); C01G 21/06 (2006.01);
U.S. Cl.
CPC ...
C23C 14/088 (2013.01); C23C 14/024 (2013.01); C23C 14/35 (2013.01); H01J 37/34 (2013.01); H01J 37/3426 (2013.01); H01J 37/3464 (2013.01); H01L 41/316 (2013.01); C01G 21/06 (2013.01); C01G 25/006 (2013.01); C01P 2002/72 (2013.01); C01P 2006/40 (2013.01);
Abstract

A method for forming a dielectric thin film that forms a PZT thin film having a (100)/(001) orientation. After a seed layer is formed by adhering PbO gas to a surface of a substrate, a voltage is applied to a target of lead zirconate titanate (PZT) and perform sputtering, while the substrate is heated inside of an evacuated vacuum chamber. Then, a PZT thin film is formed on the surface of the substrate. Because Pb and O are supplied from the seed layer, a PZT film having a (001)/(100) orientation can be formed without lack of Pb.


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