The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Aug. 08, 2012
Applicants:
Shigeru Maida, Joetsu-shi, JP;
Hisatoshi Otsuka, Joetsu-shi, JP;
Inventors:
Shigeru Maida, Joetsu-shi, JP;
Hisatoshi Otsuka, Joetsu-shi, JP;
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03B 19/14 (2006.01); C03C 3/06 (2006.01); G03F 1/24 (2012.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C03B 19/1415 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); C03C 3/06 (2013.01); G03F 1/24 (2013.01); C03B 2201/42 (2013.01); C03B 2207/06 (2013.01); C03B 2207/12 (2013.01); C03B 2207/20 (2013.01); C03B 2207/81 (2013.01); C03C 2201/42 (2013.01); C03C 2203/42 (2013.01); Y02P 40/57 (2015.11);
Abstract
Titania-doped quartz glass is manufactured by mixing a silicon-providing reactant gas and a titanium-providing reactant gas, preheating the reactant gas mixture at 200-400° C., and subjecting the mixture to oxidation or flame hydrolysis. A substrate of the glass is free of concave defects having a volume of at least 30,000 nmin an effective region of the EUV light-reflecting surface and is suited for use in the EUV lithography.