The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Mar. 15, 2013
Applicant:

Board of Regents of the Nevada System of Higher Education, on Behalf of the University of Nevada, Reno, Reno, NV (US);

Inventors:

Jesse D Adams, Reno, NV (US);

Steven Malekos, Reno, NV (US);

Nathalie Le Galloudec, Livermore, CA (US);

Grant Korgan, Reno, NV (US);

Thomas Cowan, Dresden, DE;

Yasuhiko Sentoku, Reno, NV (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05G 1/02 (2006.01); H05H 1/02 (2006.01); G21B 1/19 (2006.01); H05G 2/00 (2006.01); H01J 35/08 (2006.01);
U.S. Cl.
CPC ...
H05H 1/02 (2013.01); G21B 1/19 (2013.01); H05G 2/001 (2013.01); H01J 35/08 (2013.01); H05G 2/00 (2013.01); H05G 2/008 (2013.01); Y02E 30/16 (2013.01); Y10T 428/12 (2015.01); Y10T 428/1241 (2015.01); Y10T 428/12299 (2015.01); Y10T 428/12493 (2015.01); Y10T 428/12806 (2015.01); Y10T 428/12868 (2015.01); Y10T 428/12889 (2015.01); Y10T 428/13 (2015.01);
Abstract

In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 μm. In particular examples, the distance is less than about 1 μm. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.


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