The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
May. 12, 2014
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventor:
Wing-Chor Chan, Hsinchu, TW;
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 29/866 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 27/06 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7821 (2013.01); H01L 27/0629 (2013.01); H01L 29/1095 (2013.01); H01L 29/66681 (2013.01); H01L 29/866 (2013.01); H03K 17/687 (2013.01);
Abstract
Provided is a semiconductor device including a metal oxide semiconductor transistor, a Zener diode, and a resistor. The metal oxide semiconductor transistor includes a gate, a source and a drain. The resistor has one end electrically connected to the drain, wherein the resistor includes a high resistance which is sufficient for flowing most of current to pass the metal oxide semiconductor transistor. The Zener diode includes a cathode and an anode, in which the cathode is electrically connected the gate and another end of the resistor, and the anode is electrically connected to a gate body.