The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Aug. 11, 2014
United Microelectronics Corp., Hsin-Chu, TW;
Yi Chuen Eng, Tainan, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A field effect transistor includes a substrate, an isolation layer, a gate, a channel, drain and a source. The substrate has an active region having a rectangular area and at least one protrusion protruded from the rectangular area. The isolation layer is formed on the substrate and encircling the active region. The gate crosses the active region and is formed above a middle portion of the active region. The channel is formed in the active region directly under the gate, extends to the at least one protrusion, and divides the active region into a first section and a second section. The drain formed in the first section and the source formed in the second section.