The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Jun. 27, 2012
Applicants:
Jie Sun, Boise, ID (US);
Brian Cleereman, Boise, ID (US);
Minsoo Lee, Boise, ID (US);
Inventors:
Assignee:
INTEL CORPORATION, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/336 (2006.01); H01L 27/115 (2006.01); G11C 16/04 (2006.01); H01L 21/822 (2006.01); H01L 27/06 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); G11C 16/0483 (2013.01); H01L 21/8221 (2013.01); H01L 27/0688 (2013.01); H01L 27/1157 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 29/7889 (2013.01); H01L 29/7926 (2013.01); G11C 2213/71 (2013.01);
Abstract
An integrated circuit may include a pillar of semiconductor material, a field effect transistor having a channel that is formed in the pillar of semiconductor material, and two or more memory cells, stacked vertically on top of the field effect transistor, and having channels that are formed in the pillar semiconductor of material.