The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Aug. 14, 2014
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 24/09 (2013.01); H01L 24/89 (2013.01); H01L 25/50 (2013.01); H01L 2224/0382 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80355 (2013.01); H01L 2225/06513 (2013.01); H01L 2924/06 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/14 (2013.01); H01L 2924/20104 (2013.01); H01L 2924/20105 (2013.01); H01L 2924/20108 (2013.01); H01L 2924/20109 (2013.01);
Abstract
A method for manufacturing a semiconductor device may include providing a first dielectric layer and a first set of conductive pads on a first substrate. Each conductive pad of the first set of conductive pads may be positioned between portions of the first dielectric layer. The method may further include providing a first insulating material layer to cover the first dielectric layer and the first set of conductive pads. The method may further include removing portions of the first insulating material layer to form a first insulating layer. Openings of the first insulating layer may expose the first set of conductive pads.