The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Oct. 04, 2011
Applicants:
Jeffrey L. Libbert, O'Fallon, MO (US);
LU Fei, St. Louis, MO (US);
Inventors:
Jeffrey L. Libbert, O'Fallon, MO (US);
Lu Fei, St. Louis, MO (US);
Assignee:
SunEdison Semiconductor Limited, Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01N 1/32 (2006.01); H01L 29/34 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G01N 1/32 (2013.01); H01L 29/34 (2013.01);
Abstract
This invention generally relates to a process for detecting grown-in-defects in a semiconductor silicon substrate. The process includes contacting a surface of the semiconductor silicon substrate with a gaseous acid in a reducing atmosphere at a temperature and duration sufficient to grow grown-in -defects disposed in the semiconductor silicon substrate to a size capable of being detected by an optical detection device.