The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Mar. 14, 2014
Applicant:
Semprius, Inc., Durham, NC (US);
Inventors:
Matthew Meitl, Durham, NC (US);
Christopher Bower, Raleigh, NC (US);
Assignee:
Semprius, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/768 (2006.01); H01L 23/498 (2006.01); H01L 23/14 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/3081 (2013.01); H01L 21/30604 (2013.01); H01L 23/147 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 23/49872 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Provided are methods for making a through-silicon via feature in a silicon substrate and related systems, such as by forming a noble metal structure on a silicon substrate support surface to generate silicon substrate contact regions that are in contact with or proximate to the noble metal structure; exposing at least a portion of the silicon substrate support surface and noble metal structure to an etchant to preferentially etch the silicon substrate contact regions compared to silicon substrate non-contact regions until the etch front reaches the silicon substrate bottom surface.