The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Aug. 13, 2015
Yun-jeong Kim, Suwon-si, KR;
Sang-kyun Kim, Yongin-si, KR;
Kwang-bok Kim, Incheon, KR;
Ye-hwan Kim, Seoul, KR;
Jung-sik Choi, Seongnam-si, KR;
Choong-ho Han, Seoul, KR;
Gi-sik Hong, Hwaseong-si, KR;
Yun-Jeong Kim, Suwon-si, KR;
Sang-Kyun Kim, Yongin-si, KR;
Kwang-Bok Kim, Incheon, KR;
Ye-Hwan Kim, Seoul, KR;
Jung-Sik Choi, Seongnam-si, KR;
Choong-Ho Han, Seoul, KR;
Gi-Sik Hong, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.