The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Feb. 07, 2012
Mei-hsuan Lin, Tainan, TW;
Chih-hsun Lin, Tainan, TW;
Ching-hua Chu, Kaohsiung, TW;
Ling-sung Wang, Tainan, TW;
Mei-Hsuan Lin, Tainan, TW;
Chih-Hsun Lin, Tainan, TW;
Ching-Hua Chu, Kaohsiung, TW;
Ling-Sung Wang, Tainan, TW;
Abstract
A semiconductor device having a source feature and a drain feature formed in a substrate. The semiconductor device having a gate stack over a portion of the source feature and over a portion of the drain feature. The semiconductor device further having a first cap layer formed over substantially the entire source feature not covered by the gate stack, and a second cap layer formed over substantially the entire drain feature not covered by the gate stack. A method of forming a semiconductor device including forming a source feature and drain feature in a substrate. The method further includes forming a gate stack over a portion of the source feature and over a portion of the drain feature. The method further includes depositing a first cap layer over substantially the entire source feature not covered by the gate stack and a second cap layer over substantially the entire drain feature not covered by the gate stack.