The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Mar. 13, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Mangesh Bangar, San Jose, CA (US);

Liyan Miao, San Francisco, CA (US);

Huixiong Dai, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/471 (2006.01); H01L 21/473 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0332 (2013.01); H01L 21/0338 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/471 (2013.01); H01L 21/473 (2013.01);
Abstract

Methods of laterally oxidizing features of a patterned substrate are described. A capping layer may be disposed above lateral features to laterally confine the oxidation. The oxidizable features may be material patterned near the optical resolution of a photolithography system using a high-resolution photomask. The oxidizable features may be wider than the spaces between the oxidizable features and may be about three times the width of the spaces. Oxidized portions may be formed on either side of repeated oxidizable features. The unoxidized portions may then be removed as part of a self-aligned double patterning (SADP) process. A gapfill layer deposited thereon may be etched or polished back to form alternating fill and non-sacrificial features.


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