The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Sep. 25, 2014
Applicant:

Ultratech, Inc., San Jose, CA (US);

Inventor:

Serguei Anikitchev, Hayward, CA (US);

Assignee:

Ultratech, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/268 (2006.01); B23K 26/06 (2014.01); B23K 26/073 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02683 (2013.01); B23K 26/0608 (2013.01); B23K 26/0736 (2013.01); H01L 21/268 (2013.01); H01L 21/324 (2013.01); H01L 21/02532 (2013.01);
Abstract

The disclosure is directed to laser spike annealing using fiber lasers. The method includes performing laser spike annealing of a surface of a wafer by: generating with a plurality of fiber laser systems respective CW output radiation beams that partially overlap at the wafer surface to form an elongate annealing image having a long axis and a length Lalong the long axis; heating at least a region of the wafer to a pre-anneal temperature T; and scanning the elongate annealing image over the wafer surface and within the pre-heat region so that the annealing image has a dwell time tin the range 30 ns≦t≦10 ms and raises the wafer surface temperature to an annealing temperature T.


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