The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Aug. 27, 2013
Applicants:

Natsuki Fukuda, Shizuoka, JP;

Kazunori Fukuju, Shizuoka, JP;

Yutaka Nishioka, Shizuoka, JP;

Koukou Suu, Shizuoka, JP;

Inventors:

Natsuki Fukuda, Shizuoka, JP;

Kazunori Fukuju, Shizuoka, JP;

Yutaka Nishioka, Shizuoka, JP;

Koukou Suu, Shizuoka, JP;

Assignee:

Ulvac, Inc., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01C 7/10 (2006.01); H01C 7/108 (2006.01); H01L 45/00 (2006.01); C23C 14/00 (2006.01); C23C 14/08 (2006.01); H01C 17/06 (2006.01); H01C 17/12 (2006.01);
U.S. Cl.
CPC ...
H01C 7/108 (2013.01); C23C 14/0036 (2013.01); C23C 14/08 (2013.01); H01C 17/06 (2013.01); H01L 45/08 (2013.01); H01L 45/12 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1625 (2013.01); H01C 17/12 (2013.01);
Abstract

To provide a resistance change device that can be protected from an excess current without enlarging a device size. A resistance change deviceaccording to the present embodiment includes a lower electrode layer, an upper electrode layer, a first metal oxide layer, a second metal oxide layer, and a current limiting layer. The first metal oxide layeris disposed between the lower electrode layerand the upper electrode layer, and has a first resistivity. The second metal oxide layeris disposed between the first metal oxide layerand the upper electrode layer, and has a second resistivity higher than the first resistivity. The current limiting layeris disposed between the lower electrode layerand the first metal oxide layer, and has a third resistivity higher than the first resistivity and lower than the second resistivity.


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