The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Sep. 16, 2013
Applicant:
Sandisk Technologies, Inc., Plano, TX (US);
Inventors:
Nian Yang, Mountain View, CA (US);
Chris Avila, Saratoga, CA (US);
Steven T. Sprouse, San Jose, CA (US);
Aaron Lee, Mountain View, CA (US);
Assignee:
SanDisk Technologies Inc., Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1048 (2013.01); G11C 11/5628 (2013.01); G11C 16/10 (2013.01); G11C 16/3431 (2013.01); G11C 16/3459 (2013.01);
Abstract
In a charge-storage memory array, memory cells that are programmed to a particular threshold voltage range and have subsequently lost charge have their threshold voltages restored by selectively adding charge to the memory cells. Adding charge only to memory cells with high threshold voltage ranges may sufficiently increase threshold voltages of other memory cells so that they do not require separate addition of charge.