The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Sep. 23, 2013
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1335 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01); G02B 5/08 (2006.01);
U.S. Cl.
CPC ...
G02F 1/133553 (2013.01); G02F 1/134336 (2013.01); G02F 1/136277 (2013.01); G02B 5/0816 (2013.01); G02B 5/0875 (2013.01);
Abstract
The present invention provides a LCOS device including a silicon substrate, a first dielectric layer, a first mirror layer, a second dielectric layer, and a second mirror layer. The first dielectric layer is disposed on the silicon substrate. The first mirror layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first mirror layer. The second mirror layer is disposed on the second dielectric layer.
Hsu, Yi-Ming. (2016). Lcos device and method of fabricating the same (U.S. Patent No. 9341884). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9341884
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile