The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Sep. 05, 2007
Applicants:
Shinji Nakahara, Tokyo, JP;
Masato Sakai, Tokyo, JP;
Takayuki Dohi, Tokyo, JP;
Inventors:
Assignee:
Sumco Corporation, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/304 (2006.01); C30B 25/20 (2006.01); C30B 25/02 (2006.01); C30B 23/02 (2006.01); C30B 33/00 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 25/20 (2013.01); C30B 23/02 (2013.01); C30B 25/02 (2013.01); C30B 29/06 (2013.01); C30B 33/005 (2013.01); H01L 21/02024 (2013.01); H01L 21/76814 (2013.01);
Abstract
A method of producing an epitaxial wafer, comprising: performing epitaxial growth of silicon on a main surface of a wafer made of a silicon single crystal; performing surface flattening pretreatment of a main surface of the wafer using a treatment liquid of a predetermined composition at a temperature of 100° C. or less, thereby forming an oxide film of a predetermined thickness while removing particles adhered on the main surface of the wafer; and performing a surface polishing step where the main surface of the wafer is mirror polished.