The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

May. 28, 2010
Applicants:

Jose I. Arno, Brookfield, CT (US);

Joseph R. Despres, Middletown, CT (US);

Shkelqim Letaj, Wolcott, CT (US);

Steven M. Lurcott, Sherman, CT (US);

Thomas H. Baum, New Fairfield, CT (US);

Peng Zou, Ridgefield, CT (US);

Inventors:

Jose I. Arno, Brookfield, CT (US);

Joseph R. Despres, Middletown, CT (US);

Shkelqim Letaj, Wolcott, CT (US);

Steven M. Lurcott, Sherman, CT (US);

Thomas H. Baum, New Fairfield, CT (US);

Peng Zou, Ridgefield, CT (US);

Assignee:

ENTEGRIS, INC., Billerica, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01N 31/00 (2006.01); C23C 16/52 (2006.01); G01N 21/3504 (2014.01); C23C 16/14 (2006.01);
U.S. Cl.
CPC ...
C23C 16/52 (2013.01); C23C 16/14 (2013.01); G01N 21/3504 (2013.01);
Abstract

Apparatus and method for monitoring a vapor deposition installation in which a gas mixture can undergo gas phase nucleation (GPN) and/or chemically attack the product device, under process conditions supportive of such behavior. The apparatus includes a radiation source arranged to transmit source radiation through a sample of the gas mixture, and a thermopile detector assembly arranged to receive output radiation resulting from interaction of the source radiation with the gas mixture sample, and to responsively generate an output indicative of onset of the gas phase nucleation and/or chemical attack when such onset occurs. Such monitoring apparatus and methodology is useful in tungsten CVD processing to achieve high rate tungsten film growth without GPN or chemical attack.


Find Patent Forward Citations

Loading…