The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

Apr. 01, 2013
Applicant:

Hitachi High-technologies Corporation, Tokyo, JP;

Inventors:

Ryo Kadoi, Tokyo, JP;

Yoshikazu Sugiyama, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/10 (2006.01); H03K 17/687 (2006.01); H01J 49/02 (2006.01);
U.S. Cl.
CPC ...
H03K 17/102 (2013.01); H01J 49/022 (2013.01); H03K 17/10 (2013.01); H03K 17/687 (2013.01); Y10T 307/747 (2015.04);
Abstract

To provide a switch circuit in which ON/OFF control can be realized even in a state where high voltage is not applied, and high voltage can be completely lowered to the ground. Provided is a switch circuit that includes plural MOS switches connected in series in such a manner that the source of one element is connected to the drain of another between high voltage and a system ground and that switches a connection state between the high voltage and the system ground, the switch circuit including: a MOS switchthe source of which is connected to the system ground among the plural MOS switches; a MOS switchthe source of which is connected to the drain of the MOS switchin a shared manner and the drain of which is connected to the high voltage side among the plural MOS switches; a MOS switchthe drain of which is connected to the gate of the MOS switchin a shared manner; and a resistorthat is connected in parallel between the gate and the source of the MOS switch


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