The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Oct. 29, 2015
Applicant:
Avalanche Technology, Inc., Fremont, CA (US);
Inventors:
Rajiv Yadav Ranjan, San Jose, CA (US);
Parviz Keshtbod, Los Altos Hills, CA (US);
Roger Klas Malmhall, San Jose, CA (US);
Assignee:
Avalanche Technology, Inc., Fremont, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 43/02 (2006.01); G11C 11/56 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/5607 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract
One embodiment of the present invention includes a multi-state current-switching magnetic memory element that includes a stack of two or more magnetic tunneling junctions (MTJs), each MTJ having a free layer and being separated from other MTJs in the stack by a seeding layer formed upon an isolation layer. The stack is for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.