The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Sep. 22, 2014
Applicant:
Spin Transfer Technologies, Inc., Fremont, CA (US);
Inventors:
Mustafa Pinarbasi, Morgan Hill, CA (US);
Bartek Kardasz, Pleasanton, CA (US);
Assignee:
SPIN TRANSFER TECHNOLOGIES, INC., Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 21/02 (2006.01); H01L 29/82 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 27/22 (2006.01); B82Y 25/00 (2011.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 27/222 (2013.01); H01L 43/10 (2013.01); B82Y 25/00 (2013.01); Y10S 977/935 (2013.01);
Abstract
A magnetic tunnel junction stack is provided that includes nonmagnetic spacer layers between the free layer and the polarizer layer formed from magnesium oxide and tantalum nitride materials that balance the spin torques acting on the free layer. The design provided enables a deterministic final state for the storage layer and significantly improves the tunneling magnetoresistance value and switching characteristics of the magnetic tunnel junction for MRAM applications.