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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9337278 B1

PDFFull Text
Date of Patent:
May. 10, 2016

Filed:

Feb. 25, 2015

Gallium nitride on high thermal conductivity material device and method

Applicant:

Triquint Semiconductor, Inc., Hillsboro, OR (US);

Inventors:

Xing Gu, Plano, TX (US);

Jinqiao Xie, Allen, TX (US);

Edward A. Beam, III, Plano, TX (US);

Deep C. Dumka, Richardson, TX (US);

Cathy C. Lee, Allen, TX (US);

Assignee:

TriQuint Semiconductor, Inc., Hillsboro, OR (US);

Attorney:

Withrow & Terranova, P.L.L.C.

Primary Examiner:

Hsien Ming Lee

Int. Cl.
CPC ...
H01L 21/338 (2006.01); H01L 21/337 (2006.01); H01L 21/336 (2006.01); H01L 31/072 (2012.01); H01L 29/739 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0254 (2013.01); H01L 21/4803 (2013.01); H01L 23/367 (2013.01); H01L 23/3732 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/83192 (2013.01);
Abstract

Embodiments include but are not limited to semiconductor devices including a barrier layer, a gallium nitride channel layer having a Ga-face coupled with the barrier layer, and a thermoconductive layer having a thermal conductivity of at least 500 W/(m·K) within 1000 nanometers of a Ga-face of the gallium nitride channel layer. The semiconductor device may be a high-electron-mobility transistor or a semiconductor wafer. Methods for making the same also are described.

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Gu, Xing. (2016). Gallium nitride on high thermal conductivity material device and method (U.S. Patent No. 9337278). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9337278

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