The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

Dec. 16, 2011
Applicants:

Peng Fu, Jiangsu, CN;

Shan Luo, Shanghai, CN;

Zhong LU, Shanghai, CN;

Kaiyou Qian, Shanghai, CN;

Chin Tien Chiu, Shanghai, CN;

Cheeman Yu, Fremont, CA (US);

Hem Takiar, Fremont, CA (US);

YE Bai, Shanghai, CN;

Inventors:

Peng Fu, Jiangsu, CN;

Shan Luo, Shanghai, CN;

Zhong Lu, Shanghai, CN;

Kaiyou Qian, Shanghai, CN;

Chin Tien Chiu, Shanghai, CN;

Cheeman Yu, Fremont, CA (US);

Hem Takiar, Fremont, CA (US);

Ye Bai, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 21/56 (2006.01); H01L 23/433 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/566 (2013.01); H01L 23/4334 (2013.01); H01L 24/97 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 25/0657 (2013.01); H01L 2223/5442 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/97 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06562 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/181 (2013.01); H01L 2924/3025 (2013.01);
Abstract

A memory device including a metallic layer shielding electromagnetic radiation and/or dissipating heat, and a method of making the memory device, are disclosed. The metallic layer is formed on a metallic layer transfer assembly. The metallic layer transfer assembly and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the metallic layer is transferred from the shield to the encapsulated memory device.


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