The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Sep. 06, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Chieh-Te Chen, Kaohsiung, TW;
Feng-Yi Chang, Tainan, TW;
Kun-Yuan Liao, Hsin-Chu, TW;
Chun-Lung Chen, Tainan, TW;
Ching-Pin Hsu, Tainan, TW;
Shang-Yuan Tsai, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The present invention provides a method for manufacturing contact holes of a semiconductor device, including a first dielectric layer is provided, a first region and a second region are defined on the first dielectric layer respectively, at least two cutting hard masks are formed and disposed within the first region and the second region respectively, at least two step-height portions disposed right under the cutting hard masks respectively. Afterwards, at least one first slot opening within the first region is formed, where the first slot opening partially overlaps the cutting hard mask and directly contacts the cutting hard mask, and at least one second contact opening is formed within the second region, where the second contact opening does not contact the cutting hard mask directly, and at least two contact holes are formed, where each contact hole penetrates through each step height portion.