The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Sep. 23, 2014
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Ching-Hsiung Lee, Hsinchu, TW;
Shih-Chang Tsai, Hsinchu, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/28 (2006.01); H01L 29/792 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28282 (2013.01); H01L 27/11568 (2013.01); H01L 29/792 (2013.01);
Abstract
A method of fabricating wordlines in semiconductor memory structures is disclosed that eliminates stringers between wordlines while maintaining a stable distribution of threshold voltage. A liner is deposited before performing a wordline etch, and a partial wordline etch is then performed. Remaining portions of the liner are removed, and the wordline etch is completed to form gates having vertical or tapered profiles.