The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

Jun. 29, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyun-Min Choi, Uiwang-si, KR;

Shigenobu Maeda, Seongnam-si, KR;

Ji-Hoon Yoon, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01); G11C 17/08 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 17/08 (2013.01); G11C 13/004 (2013.01); G11C 13/0011 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01);
Abstract

A memory device may include nonvolatile memory cells. A first memory cell of the nonvolatile memory cells may have a first resistance value in a first state and a second memory cell of the nonvolatile memory cells may have a second resistance value less than the first resistance value in a second state. A third memory cell of the nonvolatile memory cells may have a third resistance value less than the first resistance value and greater than the second resistance value in a third state, and a fourth memory cell of the nonvolatile memory cells may have a fourth resistance value less than the third resistance value and greater than the second resistance value in a fourth state.


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