The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
May. 15, 2015
Murata Manufacturing Co., Ltd., Kyoto, JP;
Altti Torkkeli, Tuusula, FI;
Antti Iihola, Helsinki, FI;
MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, JP;
Abstract
A method for creating MEMS structures comprises depositing and patterning a first mask on a wafer in order to define desired first areas to be etched in a first trench etching and desired second areas to be etched in a second trench etching. A first intermediate mask is deposited and patterned on top of the first mask. Recession trenches are etched on parts of the wafer. After the first intermediate mask is removed, first trenches are etched with further etching the recession trenches. The first trenches and the recession trenches are filled with a deposit layer. Part of the deposit layer is removed on second areas. A remainder is left on certain areas, to function as a second mask. A third mask is deposited. The third mask defines the final structure. The parts of the wafer on the second areas are etched in the second trench etching. The masks are then removed.