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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9331456 B1

PDFFull Text
Date of Patent:
May. 03, 2016

Filed:

Jul. 29, 2014

Method of manufacturing semiconductor laser

Applicant:

Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;

Inventor:

Masami Ishiura, Yokohama, JP;

Assignee:

Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;

Attorneys:

Venable LLP

Michael A. Sartori

Tamatane J. Aga

Primary Examiner:

Pamela E Perkins

Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01L 27/15 (2006.01); H01S 5/32 (2006.01); H01S 5/227 (2006.01); H01S 5/30 (2006.01); H01S 5/343 (2006.01); H01S 5/22 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3211 (2013.01); H01S 5/3213 (2013.01); H01L 21/0262 (2013.01); H01L 21/02392 (2013.01); H01L 21/02395 (2013.01); H01L 21/02433 (2013.01); H01L 21/02516 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/02576 (2013.01); H01L 21/02581 (2013.01); H01S 5/227 (2013.01); H01S 5/2224 (2013.01); H01S 5/3054 (2013.01); H01S 5/3202 (2013.01); H01S 5/34306 (2013.01); H01S 2304/04 (2013.01); H01S 2304/12 (2013.01);
Abstract

A method of manufacturing a semiconductor laser according to an aspect of the present invention includes (a) sequentially epitaxially growing a first cladding layer, an active layer and a second cladding layer on a semiconductor substrate composed of InP or GaAs and having a plane index of (100), (b) forming a plurality of growth start surfaces having a plane index greater than (100) in an upper surface of the second cladding layer, and (c) epitaxially growing a third cladding layer containing zinc in the plurality of growth start surfaces of the second cladding layer.

Find Patent Forward Citations

Ishiura, Masami. (2016). Method of manufacturing semiconductor laser (U.S. Patent No. 9331456). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9331456

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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