The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9331279 B1

PDF
Full Text
Expired
Date of Patent:
May. 03, 2016

Filed:

May. 01, 2015
Applicant:

Intermolecular Inc., San Jose, CA (US);

Inventors:

Dipankar Pramanik, Saratoga, CA (US);

Tony P. Chiang, Campbell, CA (US);

David E Lazovsky, Los Gatos, CA (US);

Assignee:

Intermolecular, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1658 (2013.01); H01L 27/2436 (2013.01); H01L 45/16 (2013.01);
Abstract

An embodiment of the present invention sets forth an embedded resistive memory cell that includes a first stack of deposited layers, a second stack of deposited layers, a first electrode disposed under a first portion of the first stack, and a second electrode disposed under a second portion of the first stack and extending from under the second portion of the first stack to under the second stack. The second electrode is disposed proximate to the first electrode within the embedded resistive memory cell. The first stack of deposited layers includes a dielectric layer, a high-k dielectric layer disposed above the dielectric layer, and a metal layer disposed above the high-k dielectric layer. The second stack of deposited layers includes a high-k dielectric layer formed simultaneously with the high-k dielectric layer included in the first stack, and a metal layer disposed above the high-k dielectric layer.


Find Patent Forward Citations

Pramanik, Dipankar. (2016). Creating an embedded reram memory from a high-k metal gate transistor structure (U.S. Patent No. 9331279). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9331279

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