The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Oct. 15, 2013
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Shuhei Tatemichi, Matsumoto, JP;
Takeyoshi Nishimura, Matsumoto, JP;
Yasushi Niimura, Matsumoto, JP;
Masanori Inoue, Ina, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;
Abstract
A MOS semiconductor device has a MOS structure, including a pregion that surrounds an n-type source region and has a net doping concentration lower than a concentration of a p-type impurity in a surface of a p-type well region, and a gate electrode that is provided on top of the surface of the p-type well region sandwiched between the n-type source region and a surface layer of an nlayer, with a gate insulator disposed between the p-type well region and the gate electrode. This configuration can make the gate insulator thicker without increasing a gate threshold voltage, and help improve the reliability of the gate insulator and reduce the gate capacitance.