The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Mar. 20, 2014
AU Optronics Corporation, Hsinchu, TW;
Wei-Hao Tseng, Changhua County, TW;
Fan-Wei Chang, Nantou County, TW;
Shou-Wei Fang, Taipei, TW;
Hong-Syu Chen, Keelung, TW;
Jen-Yu Lee, Taoyuan County, TW;
Tsung-Hsiang Shih, Yilan County, TW;
Hung-Che Ting, Taipei, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
A fabrication method of a pixel structure includes the following steps. A first metal layer is patterned to form a source electrode and a drain electrode. A semiconductor material layer is patterned to form a channel layer and a pixel pattern. A first insulation layer is formed to cover the channel layer, the source electrode, the drain electrode and the pixel pattern. A gate electrode is formed on the first insulation layer located above the channel layer. A second insulation layer is formed to cover the gate electrode and the first insulation layer. A pixel opening is formed in the first insulation layer and the second insulation layer to expose a partial region of the pixel pattern. The partial region of the pixel pattern exposed by the pixel opening is modified so as to form a pixel electrode electrically connected to the drain electrode.