The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

Oct. 27, 2010
Applicants:

Sunoo Kim, Hopewell Junction, NY (US);

Muhammed Shafi Pallachalil, Wappingers Falls, NY (US);

Moosung Chae, Poughkeepsie, NY (US);

Erdem Kaltalioglu, Newburgh, NY (US);

Inventors:

Sunoo Kim, Hopewell Junction, NY (US);

Muhammed Shafi Pallachalil, Wappingers Falls, NY (US);

Moosung Chae, Poughkeepsie, NY (US);

Erdem Kaltalioglu, Newburgh, NY (US);

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/7681 (2013.01); H01L 21/76804 (2013.01); H01L 21/76808 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53295 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/00013 (2013.01);
Abstract

In one embodiment, a semiconductor device includes a first metal line disposed in a first metal level above a substrate. A second metal line is disposed in a second metal level disposed over the first metal level. A third metal line is disposed in a third metal level disposed over the second metal level. A through level via contacts the first metal line and the third metal line.


Find Patent Forward Citations

Loading…